本文整理汇总了C++中ADDR_3rd_CYCLE函数的典型用法代码示例。如果您正苦于以下问题：C++ ADDR_3rd_CYCLE函数的具体用法？C++ ADDR_3rd_CYCLE怎么用？C++ ADDR_3rd_CYCLE使用的例子？那么恭喜您, 这里精选的函数代码示例或许可以为您提供帮助。
在下文中一共展示了ADDR_3rd_CYCLE函数的16个代码示例，这些例子默认根据受欢迎程度排序。您可以为喜欢或者感觉有用的代码点赞，您的评价将有助于我们的系统推荐出更棒的C++代码示例。
示例1: NAND_EraseBlock
/**
* @brief This routine erase complete block from NAND FLASH
* @param Address: Any address into block to be erased
* @retval New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
*/
uint32_t NAND_EraseBlock(NAND_ADDRESS Address)
{
*(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE0;
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE1;
return (NAND_GetStatus());
}
开发者ID:91thUb，项目名称:usb-miner，代码行数:20，代码来源:stm3210e_eval_fsmc_nand.c
示例2: NAND_WriteSpareArea
/**
* @brief This routine write the spare area information for the specified
* pages addresses.
* @param pBuffer: pointer on the Buffer containing data to be written
* @param Address: First page address
* @param NumSpareAreaTowrite: Number of Spare Area to write
* @retval New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*/
uint32_t NAND_WriteSpareArea(uint8_t * pBuffer, NAND_ADDRESS Address,
uint32_t NumSpareAreaTowrite)
{
uint32_t index = 0x00, numsparesreawritten = 0x00, addressstatus =
NAND_VALID_ADDRESS;
uint32_t status = NAND_READY, size = 0x00;
while ((NumSpareAreaTowrite != 0x00)
&& (addressstatus == NAND_VALID_ADDRESS)
&& (status == NAND_READY)) {
/*!< Page write Spare area command and address */
*(__IO uint8_t *) (Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_C;
*(__IO uint8_t *) (Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE0;
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) = 0x00;
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_1st_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_2nd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_3rd_CYCLE(ROW_ADDRESS);
/*!< Calculate the size */
size =
NAND_SPARE_AREA_SIZE +
(NAND_SPARE_AREA_SIZE * numsparesreawritten);
/*!< Write the data */
for (; index < size; index++) {
*(__IO uint8_t *) (Bank_NAND_ADDR | DATA_AREA) =
pBuffer[index];
}
*(__IO uint8_t *) (Bank_NAND_ADDR | CMD_AREA) =
NAND_CMD_WRITE_TRUE1;
/*!< Check status for successful operation */
status = NAND_GetStatus();
if (status == NAND_READY) {
numsparesreawritten++;
NumSpareAreaTowrite--;
/*!< Calculate Next page Address */
addressstatus = NAND_AddressIncrement(&Address);
}
}
return (status | addressstatus);
}
开发者ID:suxiaocheng，项目名称:stm32_usb_hid，代码行数:65，代码来源:stm3210e_eval_fsmc_nand.c
示例3: FSMC_NAND_EraseBlock
/******************************************************************************
* Function Name : FSMC_NAND_EraseBlock
* Description : This routine erase complete block from NAND FLASH
* Input : - Address: Any address into block to be erased
* Output : None
* Return : New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
*******************************************************************************/
u32 FSMC_NAND_EraseBlock(NAND_ADDRESS Address)
{
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE0;
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_5fh_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE1;
return (FSMC_NAND_GetStatus());
}
开发者ID:liqili2009，项目名称:--，代码行数:24，代码来源:fsmc_nand.c
示例4: HAL_NAND_Erase_Block
/**
* @brief NAND memory Block erase
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Erase_Block(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress)
{
uint32_t DeviceAddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
DeviceAddress = NAND_DEVICE1;
}
else
{
DeviceAddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Erase block command sequence */
*(__IO uint8_t *)((uint32_t)(DeviceAddress | CMD_AREA)) = 0x60;
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = ADDR_1st_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = ADDR_2nd_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = ADDR_3rd_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(DeviceAddress | ADDR_AREA)) = ADDR_4th_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
}
*(__IO uint8_t *)((uint32_t)(DeviceAddress | CMD_AREA)) = 0xD0;
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
开发者ID:ccccjason，项目名称:amass，代码行数:56，代码来源:stm32f3xx_hal_nand.c
示例5: HAL_NAND_Read_ID
/**
* @brief Read the NAND memory electronic signature
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pNAND_ID: NAND ID structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_ID(NAND_HandleTypeDef *hnand, NAND_IDTypeDef *pNAND_ID)
{
__IO uint32_t data = 0;
uint32_t deviceaddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Read ID command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_READID;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
/* Read the electronic signature from NAND flash */
data = *(__IO uint32_t *)deviceaddress;
/* Return the data read */
pNAND_ID->Maker_Id = ADDR_1st_CYCLE(data);
pNAND_ID->Device_Id = ADDR_2nd_CYCLE(data);
pNAND_ID->Third_Id = ADDR_3rd_CYCLE(data);
pNAND_ID->Fourth_Id = ADDR_4th_CYCLE(data);
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
开发者ID:AlessandroA，项目名称:mbed，代码行数:55，代码来源:stm32f1xx_hal_nand.c
示例6: NAND_ReadID
/**
* @brief Reads NAND memory's ID.
* @param NAND_ID: pointer to a NAND_IDTypeDef structure which will hold
* the Manufacturer and Device ID.
* @retval None
*/
void NAND_ReadID(NAND_IDTypeDef* NAND_ID)
{
uint32_t data = 0;
/*!< Send Command to the command area */
*(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = 0x90;
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
/*!< Sequence to read ID from NAND flash */
data = *(__IO uint32_t *)(Bank_NAND_ADDR | DATA_AREA);
NAND_ID->Maker_ID = ADDR_1st_CYCLE (data);
NAND_ID->Device_ID = ADDR_2nd_CYCLE (data);
NAND_ID->Third_ID = ADDR_3rd_CYCLE (data);
NAND_ID->Fourth_ID = ADDR_4th_CYCLE (data);
}
开发者ID:91thUb，项目名称:usb-miner，代码行数:22，代码来源:stm3210e_eval_fsmc_nand.c
示例7: FSMC_NAND_WriteSmallPage
/******************************************************************************
* Function Name : FSMC_NAND_WriteSmallPage
* Description : This routine is for writing one or several 512 Bytes Page size.
* Input : - pBuffer: pointer on the Buffer containing data to be written
* - Address: First page address
* - NumPageToWrite: Number of page to write
* Output : None
* Return : New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*******************************************************************************/
u32 FSMC_NAND_WriteSmallPage(u8 *pBuffer, NAND_ADDRESS Address, u32 NumPageToWrite)
{
u32 index = 0x00, numpagewritten = 0x00, addressstatus = NAND_VALID_ADDRESS;
u32 status = NAND_READY, size = 2048;
while((NumPageToWrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY))
{
/* Page write command and address */
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A;
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE0;
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_5fh_CYCLE(ROW_ADDRESS);
/* Calculate the size */
size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten);
/* Write data */
for(; index < size; index++)
{
*(vu8 *)(Bank_NAND_ADDR | DATA_AREA) = pBuffer[index];
}
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE_TRUE1;
/* Check status for successful operation */
status = FSMC_NAND_GetStatus();
if(status == NAND_READY)
{
numpagewritten++;
NumPageToWrite--;
/* Calculate Next small page Address */
addressstatus = FSMC_NAND_AddressIncrement(&Address);
}
}
return (status | addressstatus);
}
开发者ID:liqili2009，项目名称:--，代码行数:60，代码来源:fsmc_nand.c
示例8: NAND_ReadSpareArea
/**
* @brief This routine read the spare area information from the specified
* pages addresses.
* @param pBuffer: pointer on the Buffer to fill
* @param Address: First page address
* @param NumSpareAreaToRead: Number of Spare Area to read
* @retval New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*/
uint32_t NAND_ReadSpareArea(uint8_t * pBuffer, NAND_ADDRESS Address,
uint32_t NumSpareAreaToRead)
{
uint32_t numsparearearead = 0x00, index = 0x00, addressstatus =
NAND_VALID_ADDRESS;
uint32_t status = NAND_READY, size = 0x00;
while ((NumSpareAreaToRead != 0x0)
&& (addressstatus == NAND_VALID_ADDRESS)) {
/*!< Page Read command and page address */
*(__IO uint8_t *) (Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_C;
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) = 0x00;
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_1st_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_2nd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *) (Bank_NAND_ADDR | ADDR_AREA) =
ADDR_3rd_CYCLE(ROW_ADDRESS);
/*!< Data Read */
size =
NAND_SPARE_AREA_SIZE +
(NAND_SPARE_AREA_SIZE * numsparearearead);
/*!< Get Data into Buffer */
for (; index < size; index++) {
pBuffer[index] =
*(__IO uint8_t *) (Bank_NAND_ADDR | DATA_AREA);
}
numsparearearead++;
NumSpareAreaToRead--;
/*!< Calculate page address */
addressstatus = NAND_AddressIncrement(&Address);
}
status = NAND_GetStatus();
return (status | addressstatus);
}
开发者ID:suxiaocheng，项目名称:stm32_usb_hid，代码行数:57，代码来源:stm3210e_eval_fsmc_nand.c
示例9: FSMC_NAND_ReadSmallPage
/******************************************************************************
* Function Name : FSMC_NAND_ReadSmallPage
* Description : This routine is for sequential read from one or several
* 512 Bytes Page size.
* Input : - pBuffer: pointer on the Buffer to fill
* - Address: First page address
* - NumPageToRead: Number of page to read
* Output : None
* Return : New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*******************************************************************************/
u32 FSMC_NAND_ReadSmallPage(u8 *pBuffer, NAND_ADDRESS Address, u32 NumPageToRead)
{
u32 index = 0x00, numpageread = 0x00, addressstatus = NAND_VALID_ADDRESS;
u32 status = NAND_READY, size = 2048, i = 0;
/* Calculate the size */
size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpageread);
while((NumPageToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* Page Read command and page address */
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A;
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_5fh_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_TRUE1;
for(i = 0; i <= 10000; i++);
/* Get Data into Buffer */
for(; index < size; index++)
{
pBuffer[index]= *(vu8 *)(Bank_NAND_ADDR | DATA_AREA);
}
numpageread++;
NumPageToRead--;
/* Calculate page address */
addressstatus = FSMC_NAND_AddressIncrement(&Address);
}
status = FSMC_NAND_GetStatus();
return (status | addressstatus);
}
开发者ID:liqili2009，项目名称:--，代码行数:56，代码来源:fsmc_nand.c
示例10: FSMC_NAND_ReadSpareArea
/******************************************************************************
* Function Name : FSMC_NAND_ReadSpareArea
* Description : This routine read the spare area information from the specified
* pages addresses.
* Input : - pBuffer: pointer on the Buffer to fill
* - Address: First page address
* - NumSpareAreaToRead: Number of Spare Area to read
* Output : None
* Return : New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*******************************************************************************/
u32 FSMC_NAND_ReadSpareArea(u8 *pBuffer, NAND_ADDRESS Address, u32 NumSpareAreaToRead)
{
u32 numsparearearead = 0x00, index = 0x00, addressstatus = NAND_VALID_ADDRESS;
u32 status = NAND_READY, size = 0x00;
while((NumSpareAreaToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* Page Read command and page address */
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_C;
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_5fh_CYCLE(ROW_ADDRESS);
*(vu8 *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_TRUE1;
/* Data Read */
size = NAND_SPARE_AREA_SIZE + (NAND_SPARE_AREA_SIZE * numsparearearead);
/* Get Data into Buffer */
for ( ;index < size; index++)
{
pBuffer[index] = *(vu8 *)(Bank_NAND_ADDR | DATA_AREA);
}
numsparearearead++;
NumSpareAreaToRead--;
/* Calculate page address */
addressstatus = FSMC_NAND_AddressIncrement(&Address);
}
status = FSMC_NAND_GetStatus();
return (status | addressstatus);
}
开发者ID:liqili2009，项目名称:--，代码行数:55，代码来源:fsmc_nand.c
示例11: FSMC_NAND_ReadSmallPage
/******************************************************************************
* Function Name : FSMC_NAND_ReadSmallPage
* Description : This routine is for sequential read from one or several
* 512 Bytes Page size.
* Input : - pBuffer: pointer on the Buffer to fill
* - Address: First page address
* - NumPageToRead: Number of page to read
* Output : None
* Return : New status of the NAND operation. This parameter can be:
* - NAND_TIMEOUT_ERROR: when the previous operation generate
* a Timeout error
* - NAND_READY: when memory is ready for the next operation
* And the new status of the increment address operation. It can be:
* - NAND_VALID_ADDRESS: When the new address is valid address
* - NAND_INVALID_ADDRESS: When the new address is invalid address
*******************************************************************************/
uint32_t FSMC_NAND_ReadSmallPage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToRead)
{
uint32_t index = 0x00, numpageread = 0x00, addressstatus = NAND_VALID_ADDRESS;
uint32_t status = NAND_READY, size = 0x00;
while((NumPageToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* Page Read command and page address */
*(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A;
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
*(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_TRUE1;
delay_nus(20);
/* Calculate the size */
size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpageread);
/* Get Data into Buffer */
for(; index < size; index++)
{
pBuffer[index]= *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA);
}
numpageread++;
NumPageToRead--;
/* Calculate page address */
addressstatus = FSMC_NAND_AddressIncrement(&Address);
}
status = FSMC_NAND_GetStatus();
return (status | addressstatus);
}
开发者ID:Ksangho，项目名称:stm32bootloader，代码行数:55，代码来源:fsmc_nand.c
示例12: HAL_NAND_Write_SpareArea
/**
* @brief Write Spare area(s) to NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to source buffer to write
* @param NumSpareAreaTowrite : number of spare areas to write to block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Write_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaTowrite)
{
__IO uint32_t index = 0;
uint32_t timeout = 0;
uint32_t deviceAddress = 0, size = 0, numSpareAreaWritten = 0, nandAddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
deviceAddress = NAND_DEVICE1;
}
else
{
deviceAddress = NAND_DEVICE2;
}
/* Update the FMC_NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* NAND raw address calculation */
nandAddress = ARRAY_ADDRESS(pAddress, hnand);
/* Spare area(s) write loop */
while((NumSpareAreaTowrite != 0) && (nandAddress < ((hnand->Info.BlockSize) * (hnand->Info.SpareAreaSize) * (hnand->Info.ZoneSize))))
{
/* update the buffer size */
size = (hnand->Info.SpareAreaSize) + ((hnand->Info.SpareAreaSize) * numSpareAreaWritten);
/* Send write Spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = 0x80;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_1st_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_2nd_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_3rd_CYCLE(nandAddress);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_4th_CYCLE(nandAddress);
}
/* Write data to memory */
for(; index < size; index++)
{
*(__IO uint8_t *)deviceAddress = *(uint8_t *)pBuffer++;
}
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = 0x10;
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
/* Check for timeout value */
timeout = HAL_GetTick() + NAND_WRITE_TIMEOUT;
if(HAL_GetTick() >= timeout)
{
return HAL_TIMEOUT;
}
}
/* Increment written spare areas number */
numSpareAreaWritten++;
/* Decrement spare areas to write */
NumSpareAreaTowrite--;
/* Increment the NAND address */
nandAddress = (uint32_t)(nandAddress + (hnand->Info.PageSize));
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
//.........这里部分代码省略.........
开发者ID:ccccjason，项目名称:amass，代码行数:101，代码来源:stm32f3xx_hal_nand.c
示例13: HAL_NAND_Read_SpareArea
/**
* @brief Read Spare area(s) from NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer: pointer to source buffer to write
* @param NumSpareAreaToRead: Number of spare area to read
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypedef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaToRead)
{
__IO uint32_t index = 0;
uint32_t deviceAddress = 0, size = 0, numSpareAreaRead = 0, nandAddress = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FMC_NAND_BANK2)
{
deviceAddress = NAND_DEVICE1;
}
else
{
deviceAddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* NAND raw address calculation */
nandAddress = ARRAY_ADDRESS(pAddress, hnand);
/* Spare area(s) read loop */
while((NumSpareAreaToRead != 0) && (nandAddress < ((hnand->Info.BlockSize) * (hnand->Info.SpareAreaSize) * (hnand->Info.ZoneSize))))
{
/* update the buffer size */
size = (hnand->Info.SpareAreaSize) + ((hnand->Info.SpareAreaSize) * numSpareAreaRead);
/* Send read spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_1st_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_2nd_CYCLE(nandAddress);
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_3rd_CYCLE(nandAddress);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceAddress | ADDR_AREA)) = ADDR_4th_CYCLE(nandAddress);
}
*(__IO uint8_t *)((uint32_t)(deviceAddress | CMD_AREA)) = 0x30;
/* Get Data into Buffer */
for ( ;index < size; index++)
{
*(uint8_t *)pBuffer++ = *(uint8_t *)deviceAddress;
}
/* Increment read spare areas number */
numSpareAreaRead++;
/* Decrement spare areas to read */
NumSpareAreaToRead--;
/* Increment the NAND address */
nandAddress = (uint32_t)(nandAddress + (hnand->Info.SpareAreaSize));
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
开发者ID:ccccjason，项目名称:amass，代码行数:86，代码来源:stm32f3xx_hal_nand.c
示例14: HAL_NAND_Erase_Block
/**
* @brief NAND memory Block erase
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Erase_Block(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress)
{
uint32_t deviceaddress = 0;
uint32_t tickstart = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Send Erase block command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_ERASE0;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_1st_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_2nd_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_3rd_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_4th_CYCLE(ARRAY_ADDRESS(pAddress, hnand));
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_ERASE1;
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Get tick */
tickstart = HAL_GetTick();
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
if((HAL_GetTick() - tickstart ) > NAND_WRITE_TIMEOUT)
{
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_TIMEOUT;
}
}
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
开发者ID:AlessandroA，项目名称:mbed，代码行数:72，代码来源:stm32f1xx_hal_nand.c
示例15: HAL_NAND_Read_Page
/**
* @brief Read Page(s) from NAND memory block
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to destination read buffer
* @param NumPageToRead : number of pages to read from block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Read_Page(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress, uint8_t *pBuffer, uint32_t NumPageToRead)
{
__IO uint32_t index = 0;
uint32_t deviceaddress = 0, size = 0, numpagesread = 0, addressstatus = NAND_VALID_ADDRESS;
NAND_AddressTypeDef nandaddress;
uint32_t addressoffset = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Save the content of pAddress as it will be modified */
nandaddress.Block = pAddress->Block;
nandaddress.Page = pAddress->Page;
nandaddress.Zone = pAddress->Zone;
/* Page(s) read loop */
while((NumPageToRead != 0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* update the buffer size */
size = hnand->Info.PageSize + ((hnand->Info.PageSize) * numpagesread);
/* Get the address offset */
addressoffset = ARRAY_ADDRESS(&nandaddress, hnand);
/* Send read page command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_A;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_1st_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_2nd_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_3rd_CYCLE(addressoffset);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_4th_CYCLE(addressoffset);
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_TRUE1;
/* Get Data into Buffer */
for(; index < size; index++)
{
*(uint8_t *)pBuffer++ = *(uint8_t *)deviceaddress;
}
/* Increment read pages number */
numpagesread++;
/* Decrement pages to read */
NumPageToRead--;
/* Increment the NAND address */
addressstatus = NAND_AddressIncrement(hnand, &nandaddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
/* Process unlocked */
__HAL_UNLOCK(hnand);
return HAL_OK;
}
开发者ID:AlessandroA，项目名称:mbed，代码行数:93，代码来源:stm32f1xx_hal_nand.c
示例16: HAL_NAND_Write_SpareArea
/**
* @brief Write Spare area(s) to NAND memory
* @param hnand: pointer to a NAND_HandleTypeDef structure that contains
* the configuration information for NAND module.
* @param pAddress : pointer to NAND address structure
* @param pBuffer : pointer to source buffer to write
* @param NumSpareAreaTowrite : number of spare areas to write to block
* @retval HAL status
*/
HAL_StatusTypeDef HAL_NAND_Write_SpareArea(NAND_HandleTypeDef *hnand, NAND_AddressTypeDef *pAddress, uint8_t *pBuffer, uint32_t NumSpareAreaTowrite)
{
__IO uint32_t index = 0;
uint32_t tickstart = 0;
uint32_t deviceaddress = 0, size = 0, num_spare_area_written = 0, addressstatus = NAND_VALID_ADDRESS;
NAND_AddressTypeDef nandaddress;
uint32_t addressoffset = 0;
/* Process Locked */
__HAL_LOCK(hnand);
/* Check the NAND controller state */
if(hnand->State == HAL_NAND_STATE_BUSY)
{
return HAL_BUSY;
}
/* Identify the device address */
if(hnand->Init.NandBank == FSMC_NAND_BANK2)
{
deviceaddress = NAND_DEVICE1;
}
else
{
deviceaddress = NAND_DEVICE2;
}
/* Update the FSMC_NAND controller state */
hnand->State = HAL_NAND_STATE_BUSY;
/* Save the content of pAddress as it will be modified */
nandaddress.Block = pAddress->Block;
nandaddress.Page = pAddress->Page;
nandaddress.Zone = pAddress->Zone;
/* Spare area(s) write loop */
while((NumSpareAreaTowrite != 0) && (addressstatus == NAND_VALID_ADDRESS))
{
/* update the buffer size */
size = (hnand->Info.SpareAreaSize) + ((hnand->Info.SpareAreaSize) * num_spare_area_written);
/* Get the address offset */
addressoffset = ARRAY_ADDRESS(&nandaddress, hnand);
/* Send write Spare area command sequence */
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_AREA_C;
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_WRITE0;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = 0x00;
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_1st_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_2nd_CYCLE(addressoffset);
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_3rd_CYCLE(addressoffset);
/* for 512 and 1 GB devices, 4th cycle is required */
if(hnand->Info.BlockNbr >= 1024)
{
*(__IO uint8_t *)((uint32_t)(deviceaddress | ADDR_AREA)) = ADDR_4th_CYCLE(addressoffset);
}
/* Write data to memory */
for(; index < size; index++)
{
*(__IO uint8_t *)deviceaddress = *(uint8_t *)pBuffer++;
}
*(__IO uint8_t *)((uint32_t)(deviceaddress | CMD_AREA)) = NAND_CMD_WRITE_TRUE1;
/* Get tick */
tickstart = HAL_GetTick();
/* Read status until NAND is ready */
while(HAL_NAND_Read_Status(hnand) != NAND_READY)
{
if((HAL_GetTick() - tickstart ) > NAND_WRITE_TIMEOUT)
{
return HAL_TIMEOUT;
}
}
/* Increment written spare areas number */
num_spare_area_written++;
/* Decrement spare areas to write */
NumSpareAreaTowrite--;
/* Increment the NAND address */
addressstatus = NAND_AddressIncrement(hnand, &nandaddress);
}
/* Update the NAND controller state */
hnand->State = HAL_NAND_STATE_READY;
//.........这里部分代码省略.........
开发者ID:AlessandroA，项目名称:mbed，代码行数:101，代码来源:stm32f1xx_hal_nand.c
注：本文中的ADDR_3rd_CYCLE函数示例整理自Github/MSDocs等源码及文档管理平台，相关代码片段筛选自各路编程大神贡献的开源项目，源码版权归原作者所有，传播和使用请参考对应项目的License；未经允许，请勿转载。 |
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